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The PBRN123YT-QR is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors into a small SOT23 (TO-236AB) surface-mounted device plastic package. The component features a collector-emitter voltage (VCEO) of 40 V and an output current capability of 600 mA. Internal resistor values include R1 at 2.2 kΩ and R2 at 10 kΩ, with a nominal bias resistor ratio of 4.55. The device operates within a temperature range of -65 °C to +150 °C and has a total power dissipation of 250 mW.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Confirm that the requested part number matches the exact electrical characteristics and package outline required for the target application before finalizing procurement orders.
Select this component when a compact NPN transistor with integrated biasing is required for space-constrained designs. Ensure the 40 V collector-emitter voltage rating meets the system's maximum voltage requirements. Verify that the 600 mA continuous output current capability aligns with the load demands of the intended switching or driving application.
This component belongs to the Nexperia PBRN123Y series of NPN Resistor-Equipped Transistors. The 'Q' suffix indicates qualification according to the Automotive Electronics Council standard Q101. The 'YT' designation specifies the SOT23 (TO-236AB) surface-mount package configuration used for this specific variant.
The official PNP complement is the PBRP123YT-Q. Designers requiring opposite polarity should verify pinout compatibility and electrical parameters against the PBRP123YT-Q datasheet.