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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRN123YT,215 is an NPN low VCEsat Performance-Based Resistor-Equipped Transistor (RET) in a SOT23 (TO-236AB) package. It features built-in bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ with a ±10% ratio tolerance. The device supports a collector-emitter voltage of 40 V and an output current capability of 600 mA. Key electrical characteristics include a DC current gain (hFE) of up to 750 at 300 mA and a maximum collector-emitter saturation voltage of 1.15 V at 800 mA. Total power dissipation is rated at 250 mW.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to simplify circuit design and reduce component count.
- Delivers high current gain and low collector-emitter saturation voltage for efficient switching performance.
- Provides precise resistor ratio tolerance for consistent biasing across applications.
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the complete part number including the ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm that the specific revision matches the required product data sheet version. Cross-reference pin assignments and marking codes during component intake to prevent assembly errors. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering.
Selection Notes
Select this component when a compact solution for medium-current switching is required without external base drive resistors. The integrated bias network eliminates the need for discrete components, reducing board space and pick-and-place costs. Verify that the 40 V breakdown voltage and 600 mA current rating align with the specific load requirements of the target application circuit.
Part Context
This device belongs to the Nexperia PBRN123Y series of NPN Resistor-Equipped Transistors. It serves as the NPN complement to the PBRP123YT PNP variant. The series represents a transition from the previous BISS classification to the PB RET family, maintaining the same physical footprint and electrical interface while updating the product profile designation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official Nexperia channels or distributor databases for verified cross-references before implementing alternative components.
