PBRP113ET-QR

PBRP113ET-QR

$0.05
  • Description:TRANS PREBIAS PNP 40V TO236AB
  • Series:-

SKU:7c8917005848 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 40V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 600mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 6mA, 600mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PBRP113ET-QR

Overview

The PBRP113ET-QR is a PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a transistor with built-in bias resistors in a SOT23 surface-mount package. The device supports an output current of -600 mA and withstands a collector-emitter voltage of -40 V. Internal resistors include R1 at 1 kΩ and a ratio of R2/R1 at 1, both with ±10% tolerance. Qualified under AEC-Q101 for automotive use, it features a junction temperature rating up to 150 °C and total power dissipation of 250 mW on standard FR4 PCBs.

Feature Summary

  • Integrates a PNP transistor with built-in bias resistors to reduce component count and simplify circuit design.
  • Features low collector-emitter saturation voltage and high current gain for efficient switching performance.
  • Qualified according to AEC-Q101 standards for reliable operation in automotive applications.

Applications

  • Digital applications in automotive and industrial segments
  • Switching loads
  • Medium current peripheral driver

Procurement Notes

Verify the specific suffix 'QR' against official Nexperia documentation to confirm packaging details such as reel size or tape width. Confirm that the ordering code matches the exact marking code '%7K' and pin configuration defined in the datasheet. Ensure compatibility with the specified SOT23 footprint dimensions during procurement planning.

Selection Notes

Select this component when a compact PNP switching solution with integrated base drive is required. The built-in resistors eliminate external biasing components, saving board space. Verify that the -40 V voltage rating and -600 mA current capability meet the load requirements. Consider the thermal resistance characteristics if operating near maximum power dissipation limits.

Part Context

This part belongs to Nexperia's PBRP series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PBRN113ET-Q. Both devices share similar electrical characteristics and package types, allowing for complementary push-pull configurations in digital logic and driver circuits within the same physical footprint constraints.

Replacement Considerations

Direct substitutes include other PNP RETs in SOT23 packages with comparable -40 V ratings and ~1 kΩ internal resistors. Verify pinout compatibility (Input, Ground, Output) and saturation voltage specifications. Cross-reference with the PBRP113ET non-automotive grade if AEC-Q101 qualification is not strictly required for the application.

FAQ

What are the values of the internal bias resistors?

The internal bias resistor R1 is 1 kΩ, and the ratio of R2 to R1 is 1, meaning R2 is also approximately 1 kΩ.

Is this component suitable for automotive applications?

Yes, the PBRP113ET-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -40 V.

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