PBRP113ET,215

Overview

The Nexperia PBRP113ET,215 is a PNP Resistor-Equipped Transistor (RET) in a SOT23 package. It integrates bias resistors R1 and R2, both nominally 1 kΩ with ±10% tolerance. The device supports a collector-emitter voltage of -40 V and an output current of -600 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 210 at pulsed conditions, and a low collector-emitter saturation voltage (VCEsat) of up to -750 mV at -600 mA. Thermal resistance from junction to ambient is 500 K/W in free air.

Feature Summary

• Integrates built-in bias resistors to reduce component count and simplify circuit design
• Features low collector-emitter saturation voltage for efficient switching performance
• High current gain capability suitable for medium current peripheral driver applications

Applications

• Digital applications in automotive and industrial segments
• Switching loads
• Medium current peripheral driver

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the application environment remains within the specified thermal limits and absolute maximum ratings. Ensure compatibility with standard surface-mount assembly processes for the SOT23 package type.

Selection Notes

Select this component when a compact PNP solution with integrated base biasing is required. The device serves as a direct replacement for discrete transistor and resistor combinations. Consider the -40 V rating and 600 mA current limit against the specific load requirements of the target circuit design.

Part Context

This part belongs to the Performance-Based (PB) Resistor-Equipped Transistor family. It functions as the PNP complement to the NPN PBRN113ET model. Both devices share similar electrical profiles and are designed to minimize board space while maintaining high switching efficiency in digital logic circuits.

Replacement Considerations

Public confirmed substitute: PBRN113ET (NPN complement).