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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRP113ZT-Q is a PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. It features an output current capability of -600 mA and a collector-emitter voltage of -40 V. The device integrates bias resistors with R1 at 1 kΩ and an R2/R1 ratio of 10, resulting in R2 being 10 kΩ. Qualified according to AEC-Q101, it is recommended for automotive applications.
Feature Summary
- Low collector-emitter saturation voltage
- High current gain
- Built-in bias resistors
- AEC-Q101 qualified
Applications
- Digital application in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the component against the official Nexperia datasheet PBRP113ZT-Q to confirm authenticity. Ensure the marking code matches the specified format where the first character represents the manufacturing site code. Confirm that the ordering suffix indicates AEC-Q101 qualification for automotive suitability.
Selection Notes
Select this PNP RET when a compact solution for medium current switching is required. The integrated bias network simplifies circuit design by reducing component count. Verify that the SOT23 package dimensions fit the available PCB space and that the thermal characteristics meet the application's power dissipation requirements under expected operating conditions.
Part Context
This part serves as the PNP complement to the NPN PBRN113ZT-Q within the same performance-based resistor-equipped transistor family. Both devices share similar packaging and electrical characteristics tailored for digital applications. The PBRP113ZT-Q specifically addresses designs requiring PNP logic interfacing or load switching with built-in base drive capabilities.
Replacement Considerations
The NPN equivalent is PBRN113ZT-Q. For direct functional replacement in PNP circuits, verify pinout compatibility and ensure the replacement meets the specific AEC-Q101 automotive qualification requirements if applicable to the target system.
FAQ
What are the values of the internal bias resistors?
The internal bias resistor R1 is 1 kΩ, and the resistor ratio R2/R1 is 10, making R2 equal to 10 kΩ.
Is this component suitable for automotive use?
Yes, the PBRP113ZT-Q is qualified according to AEC-Q101 and is recommended for use in automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is -40 V.
