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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRP113ZT is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT23 surface-mounted package. It integrates bias resistors R1 and R2 with values of 1 kΩ and 10 kΩ respectively, yielding a ratio of 10. The device supports a collector-emitter voltage of -40 V and an output current of -600 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 190 to 270 at -50 mA, and a low collector-emitter saturation voltage (VCEsat) as low as -45 mV under specific pulsed conditions. Thermal resistance from junction to ambient is typically 500 K/W in free air.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify circuit design.
- Features low collector-emitter saturation voltage for efficient switching performance.
- Provides high current gain capability suitable for medium current peripheral drivers.
- Reduces pick and place costs through compact SOT23 packaging.
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the ordering suffix matches the required tape and reel configuration for automated assembly. Confirm that the SOT23 footprint aligns with the manufacturer's recommended soldering guidelines to ensure reliable joint formation during reflow or wave soldering processes.
Selection Notes
Select this component when a compact PNP solution with integrated base biasing is required. Ensure the application current does not exceed the 600 mA limit and verify that the -40 V rating accommodates the maximum circuit voltage. Consider the thermal derating curves if operating in enclosed environments.
Part Context
This part belongs to the Performance-Based (PB) RET series, designed to replace discrete transistor and resistor combinations. It serves as the PNP complement to the NPN PBRN113ZT, offering symmetrical design options for push-pull or complementary logic circuits within space-constrained PCB layouts.
Replacement Considerations
Direct functional substitutes include other PNP RETs in SOT23 packages with similar 1k/10k resistor ratios and -40V ratings. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
What are the specific values of the internal bias resistors?
The internal bias resistors are R1 = 1 kΩ and R2 = 10 kΩ, resulting in a fixed ratio of 10.
How is the pin configuration defined for the SOT23 package?
Pin 1 is the Input (Base), Pin 2 is Ground (Emitter), and Pin 3 is Output (Collector).
What is the typical DC current gain (hFE) at -50 mA?
The typical DC current gain is approximately 270, with a minimum specified value of 190 at IC = -50 mA and VCE = -5 V.
