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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRP123ET,215 is a PNP Performance-Based Resistor-Equipped Transistor (PB RET) manufactured by Nexperia USA Inc. It integrates bias resistors into a single SOT-23 (TO-236AB) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -40 V and an output current capability of -600 mA. The device features a typical base bias resistor (R1) of 2.2 kΩ with a tolerance range of 1.54 kΩ to 2.86 kΩ. The internal resistor ratio (R2/R1) has a typical value of 1, ranging from 0.9 to 1.1. DC current gain (hFE) is specified at a minimum of 120 under standard test conditions.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Features low collector-emitter saturation voltage for efficient switching performance.
- Provides high current gain suitable for medium current peripheral driver applications.
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. Ensure the -40 V voltage rating meets the system's maximum collector-emitter requirements. Consider the thermal resistance characteristics if operating near the 600 mA current limit or in high ambient temperature environments.
Part Context
This part belongs to Nexperia's PB RET family, designed to replace discrete transistor and resistor networks. It serves as the PNP complement to the NPN PBRN123ET. The device utilizes the standard SOT-23 plastic package, facilitating automated pick-and-place assembly while maintaining a small footprint for modern electronic equipment.
Replacement Considerations
The NPN equivalent is the PBRN123ET. For direct functional replacement in PNP circuits, verify pinout compatibility and ensure the replacement device matches the -40 V VCEO and -600 mA IO ratings. Check datasheet specifications for saturation voltage and current gain to confirm circuit performance equivalence.
