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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRP123YT-Q is a PNP low VCEsat Performance-Based Resistor-Equipped Transistor (RET) in an SOT23 package. It features a collector-emitter voltage of -40 V, output current capability of -600 mA, and total power dissipation of 250 mW at 25 °C. The device includes built-in bias resistors with R1 typically at 2.2 kΩ and an R2/R1 ratio of 4.55. DC current gain (hFE) ranges from 190 to 320 under pulsed conditions. Thermal resistance from junction to ambient is 500 K/W in free air. Qualified according to AEC-Q101 for automotive applications.
Feature Summary
- Low collector-emitter saturation voltage for efficient switching
- High current gain hFE supporting robust drive capabilities
- Built-in bias resistors simplify circuit design and reduce component count
- Qualified according to AEC-Q101 for automotive use
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and manufacturing site codes. Ensure compliance with RoHS directives and confirm that the AEC-Q101 qualification aligns with target automotive reliability standards before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with integrated biasing is required for space-constrained designs. The SOT23 package suits surface-mount assembly. Consider the -40 V rating and 600 mA current limit for load switching. Verify thermal management requirements given the 250 mW power dissipation limit in free air.
Part Context
This part belongs to the PBRP123 series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PBRN123YT-Q. The device integrates two resistors within a single SOT23 plastic package to replace discrete BJT and resistor combinations, reducing footprint and assembly costs.
Replacement Considerations
The NPN equivalent is PBRN123YT-Q. For general-purpose replacements, verify pinout compatibility and electrical ratings against standard PNP RETs like PDTA123ET. Ensure the replacement supports the required -40 V breakdown and 600 mA current capability.
FAQ
What are the typical values for the internal bias resistors?
R1 is typically 2.2 kΩ, and the R2/R1 ratio is typically 4.55.
Is this component qualified for automotive applications?
Yes, it is qualified according to the AEC-Q101 standard and recommended for automotive use.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is -40 V.
