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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 40V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：230 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 6mA, 600mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PBRP123YT,215 is a PNP Resistor-Equipped Transistor (RET) from Nexperia USA Inc., housed in an SOT23 (TO-236AB) surface-mount package. It integrates bias resistors R1 and R2 with a low VCEsat PNP transistor. Key electrical parameters include a collector-emitter voltage (VCEO) of -40 V, an output current (IO) of -600 mA, and total power dissipation (Ptot) of 250 mW at 25 °C. The typical bias resistor R1 is 2.2 kΩ, with an R2/R1 ratio of 4.55. DC current gain (hFE) ranges from 190 to 320 depending on collector current conditions.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Features low collector-emitter saturation voltage for efficient switching performance.
- Provides high current gain capability suitable for digital applications.
- Includes ±10% resistor ratio tolerance for consistent biasing.
Applications
- Digital applications in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
Procurement Notes
Verify the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape, as indicated by distributor part numbers. Confirm the manufacturer source directly through authorized Nexperia channels to ensure authenticity. Check the latest product status documentation for any changes to specifications or availability before finalizing procurement plans.
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required for medium-current switching. Ensure the application voltage does not exceed the -40 V collector-emitter rating. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits. Verify that the built-in resistor values align with the driving logic levels of the control circuit.
Part Context
This device belongs to the Nexperia Performance-Based (PB) Resistor-Equipped Transistor family. It serves as the PNP complement to the NPN PBRN123YT. The component is designed for small plastic packages, specifically the SOT23 form factor, targeting space-constrained designs in digital and industrial electronics.
Replacement Considerations
The NXP PBRN123YT is documented as the NPN complement within the same series. For direct PNP replacements, verify equivalent RET devices with matching -40 V ratings and similar bias resistor ratios from other manufacturers, ensuring pinout compatibility with the SOT23 package.
