PBSM5240PF,115

Overview

The PBSM5240PF is a dual-component module combining a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an N-channel Trench MOSFET, housed in a leadless SOT1118 (HUSON6) package. The PNP section supports a collector-emitter voltage of -40 V, continuous collector current of -1.8 A, and peak repetitive current of -2 A. The N-channel MOSFET provides a drain-source voltage of 30 V and a continuous drain current of 660 mA at 25 °C. Key electrical parameters include a typical RCEsat of 240 mΩ for the BISS transistor and a typical RDSon of 370 mΩ for the MOSFET.

Feature Summary

• Combines a PNP low VCEsat BISS transistor with an N-channel Trench MOSFET in a single compact package to reduce PCB area.
• Offers high energy efficiency through reduced heat generation and low saturation/on-state resistance.
• Provides high collector current capability and high current gain at elevated currents for the PNP component.

Applications

• Loadswitch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the SOT1118 package dimensions align with the target footprint design. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under expected operating conditions.

Selection Notes

Select this component when space-constrained designs require both PNP switching and N-channel MOSFET functionality within a single footprint. Evaluate the -40 V PNP and 30 V N-channel voltage ratings against system supply rails. Consider the low VCEsat and RDSon characteristics for applications prioritizing power efficiency and minimal voltage drop during conduction.

Part Context

This device belongs to Nexperia's portfolio of combined discrete semiconductor modules designed to simplify circuit layouts. It integrates distinct bipolar and field-effect technologies into one leadless plastic package, addressing the industry demand for miniaturization in portable and battery-powered electronics without compromising current handling capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Nexperia channels or authorized distributors for qualified alternatives if this specific marking code or package variant is unavailable.

FAQ

What is the maximum peak collector current for the PNP transistor?

The repetitive peak collector current (ICRM) is -2 A, while the single-pulse peak collector current (ICM) can reach -3 A for pulses up to 1 ms.

How does the gate-source threshold voltage vary with temperature?

At 25 °C, the typical VGS(th) is 0.7 V. At 150 °C, it decreases to approximately 0.25 V, while at -55 °C, it increases to about 1.15 V.

Is this component automotive qualified?

No, unless explicitly stated otherwise in specific product data sheets, this product is not suitable for automotive use and has not been qualified according to automotive testing requirements.