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The Nexperia PBSS2515VS is a low VCEsat NPN double transistor housed in an SOT666 ultra-small and flat lead Surface-Mounted Device plastic package. It features a total power dissipation of 300 mW and a collector current capability of 500 mA per transistor. The device offers a DC current gain (hFE) of at least 200 at IC = 10 mA and VCE = 2 V. Maximum ratings include a collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 15 V, and an emitter-base voltage (VEBO) of 6 V. The transition frequency (fT) reaches 420 MHz at IC = 100 mA.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Confirm that the component meets non-automotive qualification requirements as stated in the datasheet. Ensure compatibility with standard reflow soldering methods recommended for the SOT666 package. Check for any recent revision history updates that may affect product specifications or legal disclaimers before finalizing procurement plans.
Select this component when space constraints require replacing two discrete SC-75 or SC-89 transistors with a single dual unit. Consider the 15 V voltage rating and 500 mA current limit for appropriate load handling. Evaluate the low VCEsat characteristics for applications requiring reduced power loss. Verify that the non-automotive qualification aligns with the target application environment and reliability standards.
This part belongs to the PBSS series of low VCEsat transistors designed for compact surface-mount applications. The PNP complement for this NPN double transistor is the PBSS3515VS. Both components share similar packaging and performance characteristics, allowing for complementary circuit designs within the same physical footprint constraints.
Directly replaces two SC-75 or SC-89 packaged low VCEsat transistors on the same PCB area.