ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN DUAL 20V 7.5A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：7.5A
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：275mV @ 375mA, 7.5A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 4A, 2V
- Power - Max：2.3W
- Frequency - Transition：115MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The PBSS4021SN is a dual NPN Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) plastic surface-mount package. It features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) rating of 7.5 A, with a peak pulse current (ICM) capability of 15 A. The device exhibits a low collector-emitter saturation resistance (RCEsat) of 35 mΩ maximum at IC = 5 A and IB = 0.5 A. Thermal performance includes a junction-to-ambient thermal resistance (Rth(j-a)) ranging from 75 K/W to 170 K/W depending on PCB mounting conditions. The component supports a maximum junction temperature of 150 °C and operates within an ambient temperature range of -55 °C to +150 °C.
Feature Summary
- Very low collector-emitter saturation voltage for high efficiency
- High collector current capability for power switching applications
- High DC current gain maintained at elevated collector currents
- Reduced printed-circuit board area requirements compared to conventional transistors
Applications
- Loadswitch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the requested part number matches the exact electrical characteristics and pin configuration defined in the product data sheet before finalizing procurement orders.
Selection Notes
Select this component when low saturation voltage and high current handling are required in a compact surface-mount form factor. Evaluate the thermal resistance values based on the specific PCB copper area and material used in the design to ensure the junction temperature remains within the specified 150 °C limit under expected operating loads.
Part Context
This device belongs to Nexperia's BISS transistor family, designed to offer improved performance over standard small-signal transistors. The dual NPN configuration in a single SO8 package allows for space-efficient designs in power management and switching applications where low heat generation and high current gain are critical design parameters.
Replacement Considerations
The datasheet identifies the PBSS4021SP as the PNP/PNP complement and the PBSS4021SPN as the NPN/PNP complement. Verify pin compatibility and electrical symmetry if substituting with these related parts or other BISS series components.
