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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 30V 5.7A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：5.7A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：450mV @ 300mA, 6A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2A, 2V
- Power - Max：2.3W
- Frequency - Transition：140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The PBSS4032SN is a dual NPN Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) plastic package. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) of 5.7 A, with a peak pulse current (ICM) of 10 A. The device exhibits low saturation resistance (RCEsat), typically 45 mΩ at IC=4A and IB=0.4A. Total power dissipation reaches 0.73 W in free air at 25°C ambient temperature. Junction temperature limits extend to 150°C, supporting high-efficiency thermal management.
Feature Summary
- Low collector-emitter saturation voltage for reduced heat generation
- Optimized switching time characteristics
- High collector current capability at elevated gain levels
- Reduced printed-circuit board area requirements compared to conventional transistors
Applications
- DC-to-DC conversion circuits
- Battery-driven devices
- Power management systems
- Charging circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packing methods and tape-and-reel specifications. Confirm that the component status remains active and matches the required RoHS compliance standards before finalizing procurement orders.
Selection Notes
Evaluate the thermal resistance values relative to the intended PCB footprint and copper area. Ensure base drive currents meet the minimum requirements specified for the target collector current to maintain optimal saturation performance and minimize voltage drop across the device.
Part Context
This component belongs to Nexperia's BISS transistor family, designed specifically for medium-power surface-mount applications. It integrates two isolated NPN transistors within a single compact SO8 package, offering a space-efficient alternative to discrete dual-transistor configurations in dense circuit designs.
Replacement Considerations
The datasheet identifies the PBSS4032SP as the PNP/PNP complement within the same series. Verify pinout compatibility and electrical parameters when considering cross-type substitutions or complementary pairs in existing circuit architectures.
FAQ
What is the marking code for this component?
The marking code printed on the device body is '4032SN'.
How does the total power dissipation vary with mounting conditions?
Total power dissipation depends on the substrate: it is 0.73 W in free air, 1 W on a standard FR4 PCB, and 1.7 W on a ceramic Al2O3 PCB.
What are the typical switching times at IC = 1A?
At IC = 1A, the turn-on time is typically 65 ns and the turn-off time is typically 215 ns.
