PBSS4041SPN,115

PBSS4041SPN,115

  • Description:TRANS NPN/PNP 60V 6.7A/5.9A 8-SO
  • Series:-

SKU:7ff09aef523d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN/PNP 60V 6.7A/5.9A 8-SO
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):6.7A, 5.9A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:350mV @ 350mA, 7A / 275mV @ 400mA, 4A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 4A, 2V / 150 @ 2A, 2V
  • Power - Max:2.3W
  • Frequency - Transition:130MHz, 110MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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PBSS4041SPN,115

Overview

The PBSS4041SPN,115 is a Breakthrough In Small Signal (BISS) transistor featuring integrated NPN and PNP units in an SOT96-1 (SO8) package. The NPN section supports a collector current of 6.7 A with a VCEO of 60 V, while the PNP section handles -5.9 A at -60 V. Peak collector currents reach 15 A for both polarities. Collector-emitter saturation resistance is specified at 32 mΩ for the NPN and 70 mΩ for the PNP under defined drive conditions. Total power dissipation varies from 0.73 W to 1.7 W depending on the PCB substrate. Junction temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Very low collector-emitter saturation voltage for high efficiency
  • High collector current capability for both NPN and PNP sections
  • High DC current gain maintained at elevated collector currents
  • Reduced Printed-Circuit Board area requirements compared to conventional transistors

Applications

  • Loadswitch circuits
  • Charging circuits
  • Battery-driven devices
  • Power switches such as motors and fans
  • Power management systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packing methods and tape-and-reel specifications. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for the target assembly process before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require dual polarity switching capabilities within a single surface-mount footprint. Evaluate thermal performance based on the specific FR4 or ceramic PCB mounting pad configuration to determine appropriate heat dissipation strategies and derating curves for the intended operating environment.

Part Context

This device belongs to Nexperia's BISS transistor family, designed to replace multiple discrete components. It integrates complementary NPN and PNP bipolar junction transistors into one SO8 package, simplifying layout and reducing board real estate compared to using separate individual transistors for similar functions.

Replacement Considerations

The datasheet lists PBSS4041SN and PBSS4041SP as related type numbers within the same series. Verify pinout compatibility and electrical parameters against these variants before substitution.

PBSS4041SPN,115PBSS4041SPN,115

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