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The PBSS4041SPN,115 is a Breakthrough In Small Signal (BISS) transistor featuring integrated NPN and PNP units in an SOT96-1 (SO8) package. The NPN section supports a collector current of 6.7 A with a VCEO of 60 V, while the PNP section handles -5.9 A at -60 V. Peak collector currents reach 15 A for both polarities. Collector-emitter saturation resistance is specified at 32 mΩ for the NPN and 70 mΩ for the PNP under defined drive conditions. Total power dissipation varies from 0.73 W to 1.7 W depending on the PCB substrate. Junction temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packing methods and tape-and-reel specifications. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for the target assembly process before finalizing procurement orders.
Select this component when space-constrained designs require dual polarity switching capabilities within a single surface-mount footprint. Evaluate thermal performance based on the specific FR4 or ceramic PCB mounting pad configuration to determine appropriate heat dissipation strategies and derating curves for the intended operating environment.
This device belongs to Nexperia's BISS transistor family, designed to replace multiple discrete components. It integrates complementary NPN and PNP bipolar junction transistors into one SO8 package, simplifying layout and reducing board real estate compared to using separate individual transistors for similar functions.
The datasheet lists PBSS4041SN and PBSS4041SP as related type numbers within the same series. Verify pinout compatibility and electrical parameters against these variants before substitution.