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Product Detailed Parameters
- Description：PBSS4112PANP-Q/SOT1118/HUSON6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：120V
- Vce Saturation (Max) @ Ib, Ic：260mV @ 50mA, 1A / 480mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：240 @ 100mA, 2V / 190 @ 100mA, 2V
- Power - Max：510mW
- Frequency - Transition：120MHz, 100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PBSS4112PANP-Q is a dual NPN/PNP low VCEsat transistor in a DFN2020-6 (SOT1118) leadless package. It features a collector-emitter voltage of 120 V and continuous collector current of 1 A per transistor, with peak currents up to 1.5 A. The NPN transistor exhibits a saturation resistance of 240 mΩ at 500 mA, while the PNP reaches 440 mΩ under identical conditions. DC current gain ranges from 240 to 375 for the NPN and 190 to 305 for the PNP at 100 mA. Transition frequencies are 120 MHz for NPN and 100 MHz for PNP. Total power dissipation reaches 2 W on FR4 PCBs.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Very low collector-emitter saturation voltage
- High collector current capability
- Reduced printed-circuit board requirements
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the marking code '2T' with physical samples during incoming inspection to validate authenticity and traceability.
Selection Notes
Select this component when high-voltage switching (120 V) and compact surface-mount footprints are required. The dual configuration simplifies circuit design for complementary switching tasks. Evaluate thermal performance based on the specific PCB copper thickness and layer count, as power dissipation capabilities vary significantly between single-sided and four-layer board implementations.
Part Context
This device belongs to Nexperia's BISS (Breakthrough In Small Signal) family, designed for low saturation voltages in small packages. It serves as the complementary pair to the PBSS4112PAN-Q, which contains two NPN transistors. The Q-suffix indicates automotive qualification, distinguishing it from standard industrial variants within the same electrical specification envelope.
Replacement Considerations
PBSS4112PAN-Q
FAQ
What is the maximum peak collector current?
The maximum peak collector current is 1.5 A for a single pulse duration of tp ≤ 1 ms.
How does the saturation resistance differ between the NPN and PNP transistors?
At IC = 500 mA and IB = 50 mA, the NPN saturation resistance is typically 240 mΩ, while the PNP is typically 440 mΩ.
What is the transition frequency for the NPN transistor?
The typical transition frequency (fT) for the NPN transistor is 120 MHz at VCE = 10 V and IC = 50 mA.
