PBSS4112PANP,115

Overview

The PBSS4112PANP,115 is a dual NPN/PNP low VCEsat transistor manufactured by Nexperia in a leadless DFN2020-6 (SOT1118) package. It features a collector-emitter voltage rating of 120 V and a continuous collector current capability of 1 A per transistor. The device supports a peak collector current of 1.5 A with pulse durations up to 1 ms. Key electrical parameters include a typical collector-emitter saturation resistance of 240 mΩ for the NPN transistor and 440 mΩ for the PNP transistor at 500 mA. The junction temperature maximum is 150 °C, and the transition frequency reaches up to 120 MHz for the NPN side.

Feature Summary

• Very low collector-emitter saturation voltage for high efficiency
• High collector current capability for power switching applications
• High DC current gain at elevated collector currents
• Reduced printed-circuit board requirements due to thermal design

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g., motors, fans)

Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the application environment does not require automotive qualification, as this specific part number is designated as non-automotive qualified according to the product data sheet revision history. Ensure the supply chain source provides authentic Nexperia documentation.

Selection Notes

Select this component when a 120 V breakdown voltage is required alongside a 1 A continuous current rating. The DFN2020-6 package is suitable for designs prioritizing thermal performance and reduced footprint. Consider the complementary single-transistor versions, PBSS4112PAN and PBSS5112PAP, if only one polarity is needed for the circuit design.

Part Context

This component belongs to the BISS (Breakthrough In Small Signal) transistor family from Nexperia. It serves as a complement to the lower voltage PBSS4130PANP model. The device integrates matched NPN and PNP transistors into a single leadless surface-mounted plastic package designed for efficient heat dissipation.

Replacement Considerations

Direct functional substitutes within the same voltage class include the PBSS4130PANP, although it operates at a lower 30 V rating. For identical specifications, verify availability of the single-transistor variants PBSS4112PAN or PBSS5112PAP if the complementary pair is not strictly necessary.