PBSS4140DPN/DG/B2,115

Overview

The Nexperia PBSS4140DPN is a dual NPN/PNP low VCEsat transistor pair housed in a TSOP6 (SOT457) surface-mount package. It provides a total power dissipation of 600 mW with individual collector currents rated at 1 A and peak pulse currents up to 2 A. The device features a collector-emitter voltage of 40 V and a transition frequency of 150 MHz. Key electrical parameters include a typical saturation resistance of 260 mΩ for the NPN section and 300 mΩ for the PNP section under specified pulsed conditions. The component is qualified to AEC-Q101 standards, ensuring reliability for automotive applications.

Feature Summary

• Replaces two discrete SOT23 packaged transistors within the same PCB footprint
• Reduces required printed circuit board area and pick-and-place manufacturing costs
• Minimizes heat generation through low collector-emitter saturation voltage characteristics
• Qualified for automotive applications according to AEC-Q101 stress test standards

Applications

• General purpose switching and muting circuits
• LCD backlighting control systems
• Supply line switching applications
• Battery-driven equipment such as mobile phones and video cameras

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and marking codes. Ensure that the procurement channel sources directly from authorized distributors to maintain product integrity. Confirm compliance requirements such as RoHS status prior to finalizing orders. Cross-reference the datasheet revision history to ensure the most current specifications are being utilized during the design phase.

Selection Notes

Select this component when space constraints prevent the use of two separate SOT23 packages. Evaluate the thermal resistance of 208 K/W in free air against the system's cooling capabilities. Consider the 1 A continuous current rating and 2 A peak capability for load requirements. Verify that the 40 V breakdown voltage aligns with the maximum operating voltages of the target circuit application.

Part Context

This part belongs to the PBSS4140 series of low VCEsat bipolar junction transistors. It utilizes mesh-emitter technology to achieve high current gain and reduced saturation voltage. The SC-74 plastic package allows for efficient thermal transfer via the exposed pad. It serves as a compact alternative to discrete transistor pairs in portable and automotive electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.