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The PBSS4160DS,115 is a dual NPN low VCEsat transistor pair housed in a SOT457 (SC-74) TSOP6 surface-mounted package. It supports a maximum collector-emitter voltage of 60V and a continuous collector current of 1A per transistor, with a peak pulse current capability of 2A. The device features a typical collector-emitter saturation resistance of 200mΩ at 1A collector current. Total power dissipation reaches up to 700mW depending on the PCB mounting conditions. The transition frequency is typically 220MHz, and the junction temperature range extends from -65°C to 150°C.
Verify the specific ordering suffix to confirm packaging details such as reel size or tape-and-reel specifications. Confirm that the product status aligns with the intended design lifecycle, noting that this version is designated as non-automotive qualified according to the latest revision history. Ensure compatibility with standard reflow soldering profiles for the TSOP6 outline.
Select this component when space constraints require a compact dual transistor solution with low saturation voltage. Evaluate thermal performance against the derating curves provided for FR4 and ceramic PCBs. Consider the 60V rating and 1A current limit to ensure adequate headroom for the target switching loads and duty cycles.
This part belongs to the PBSS4160 series of low VCEsat transistors. The PNP/PNP complement is the PBSS5160DS. The device utilizes the SOT457 plastic package, also known as SC-74 or TSOP6, which provides a small footprint suitable for dense surface-mount assemblies.
The PBSS5160DS serves as the PNP/PNP complement within the same series. Verify pinout compatibility if substituting with other dual transistor arrays, as pin configurations may vary between different manufacturers' packages.