PBSS4160DSH

Overview

The PBSS4160DSH is a dual NPN low VCEsat transistor pair manufactured by Nexperia USA Inc., housed in a SOT457 (SC-74) TSOP6 surface-mounted package. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A per transistor, with a peak pulse current (ICM) of 2 A. The device exhibits a typical collector-emitter saturation resistance (RCEsat) of 200 mΩ at IC = 1 A and IB = 100 mA. Total power dissipation reaches 700 mW at Tamb ≤ 25 °C on an FR4 PCB. The junction temperature range spans from -65 °C to +150 °C, and the transition frequency (fT) is typically 220 MHz.

Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• High collector current capability with minimal heat generation
• Space-saving dual configuration reducing PCB area

Applications

• Dual low power switches for motors and fans
• Automotive applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Confirm that the component meets the required automotive or industrial qualification standards before integration into final designs.

Selection Notes

Select this component for applications requiring dual NPN switching with low saturation voltage. Ensure thermal management aligns with the specified power derating curves for the target PCB footprint and ambient temperature conditions.

Part Context

This part belongs to the PBSS4160 series of low VCEsat transistors. The PNP/PNP complement is the PBSS5160DS. The 'H' suffix typically denotes tape and reel packaging, while the base model PBSS4160DS is available in cut tape or standard reel formats.

Replacement Considerations

Direct functional substitutes include the PBSS5160DS for PNP/NPN configurations. Verify pinout compatibility and electrical ratings when considering alternative manufacturers' dual transistor arrays.