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Product Detailed Parameters
- Description：TRANS NPN/PNP 60V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：220mV @ 100mA, 1A / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：290 @ 100mA, 2V / 170 @ 100mA, 2V
- Power - Max：370mW
- Frequency - Transition：175MHz, 125MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PBSS4160PANP-Q is a dual NPN/PNP low VCEsat transistor manufactured by Nexperia, housed in a leadless DFN2020-6 (SOT1118) package. It supports a maximum collector current of 1 A and a collector-emitter voltage of 60 V. The device features a peak collector current of 1.5 A and a total power dissipation of 2 W at 25 °C. Electrical characteristics include a typical DC current gain (hFE) of 430 for the NPN transistor at 100 mA. Transition frequencies are rated at 175 MHz for the NPN and 125 MHz for the PNP transistor.
Feature Summary
- Very low collector-emitter saturation voltage to minimize conduction losses
- High collector current capability with significant peak pulse support
- Automotive qualified according to AEC-Q101 standards
- Reduced PCB requirements due to efficient thermal management
Applications
- Load switch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or certified supply chain partners. Confirm that the received parts match the specified SOT1118 package and marking code '2M'. Ensure storage conditions comply with moisture sensitivity level requirements to prevent soldering defects during assembly.
Selection Notes
Select this component when designing circuits requiring complementary NPN/PNP switching in a compact footprint. Evaluate thermal resistance values based on the specific PCB copper layer thickness and trace width. Ensure base drive currents meet the minimum requirements to maintain low saturation voltages under expected load conditions.
Part Context
This part belongs to the PBSS4160 series of low saturation voltage transistors. It serves as a complement to single-transistor variants like the PBSS4160PAN. The Q suffix indicates automotive qualification status, distinguishing it from standard commercial grade versions while maintaining identical electrical performance specifications.
Replacement Considerations
Direct functional substitutes within the same package include the PBSS4160PAN for NPN-only applications. For PNP-only needs, the PBSS5160PAP is the designated complement. Verify pinout compatibility and thermal characteristics before replacing existing designs.
