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The PBSS4160PANPSX is a dual NPN Breakthrough In Small Signal (BISS) transistor housed in a DFN2020D-6 (SOT1118D) leadless package. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A, with a peak pulse current (ICM) of 1.5 A. The device exhibits very low saturation resistance, specified at 240 mΩ for the NPN transistor under pulsed conditions. Power dissipation reaches 2 W when mounted on a standard FR4 PCB. Transition frequencies are rated at 175 MHz for the NPN section and 125 MHz for the complementary PNP section.
Verify the component marking code '3G' against the official datasheet to confirm authenticity. Ensure the ordering suffix matches the required reel or cut tape packaging format. Confirm RoHS compliance status and check for any specific automotive qualification documentation if deploying in regulated environments.
Select this component for applications requiring low conduction losses in compact designs. The exposed pad design necessitates adequate copper area on the PCB for optimal thermal performance. Verify that the drive circuit can supply sufficient base current to maintain the low saturation resistance specifications during operation.
This part belongs to the PBSS4160 series of BISS transistors manufactured by Nexperia. It serves as an NPN/NPN dual configuration within the family, distinct from the NPN/PNP PBSS4160DPN variant. The SOT1118D package provides a thermally enhanced solution compared to traditional plastic packages.
Direct functional substitutes include the PBSS4160PANS (NPN/PNP complement) and PBSS5160PAPS (PNP/PNP). For identical NPN/NPN configurations, verify pinout compatibility before replacing.