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The PBSS4160PANS-QX is a dual NPN Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 60 V and a continuous collector current of 1 A per transistor, supporting peak currents up to 1.5 A. The device utilizes a DFN2020D-6 (SOT1118D) leadless package measuring 2 x 2 x 0.65 mm. Key electrical characteristics include a typical DC current gain (hFE) ranging from 70 to 430 depending on current levels, and a transition frequency (fT) of 175 MHz. The component features an exposed heat sink for thermal management and is qualified under the AEC-Q101 standard.
Verify the specific ordering suffix '-QX' against official Nexperia documentation to confirm its exact impact on packaging or lot traceability. Ensure that the procurement channel provides valid AEC-Q101 certification records. Confirm that the delivered components match the DFN2020D-6 physical dimensions and marking codes specified in the datasheet.
Select this component when a dual NPN configuration is required within a compact footprint. The BISS technology offers lower power dissipation compared to standard small-signal transistors. Consider the DFN2020D-6 package for improved thermal performance via the exposed pad. Verify that the 60 V rating and 1 A current limits align with the target circuit requirements.
This part belongs to the Nexperia PBSS4160 series of low VCEsat BISS transistors. It serves as the NPN/NPN variant within this family. Complementary configurations are available, including the PNP/PNP type PBSS5160PAPS and the NPN/PNP type PBSS4160PANPS. All variants share similar electrical characteristics optimized for power efficiency.
Direct replacements must maintain the dual NPN topology and DFN2020D-6 package. Evaluate alternatives based on matching VCEO ratings of 60 V and comparable hFE curves. Ensure any substitute also meets AEC-Q101 standards if automotive application compliance is required.