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Product Detailed Parameters
- Description：TRANS 2NPN 60V 1A DFN2020D-6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 500mA, 2V
- Power - Max：370mW
- Frequency - Transition：175MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：DFN2020D-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PBSS4160PANSX is a dual NPN Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It features a DFN2020D-6 (SOT1118D) leadless package with visible and solderable side pads. The device supports a collector-emitter voltage of 60 V and a continuous collector current of 1 A per transistor, with a peak pulse current capability of 1.5 A. Key electrical parameters include a maximum collector-base voltage of 60 V, an emitter-base voltage of 7 V, and a typical DC current gain (hFE) ranging from 70 to 430 depending on the collector current. The transition frequency is typically 175 MHz at 50 mA. Total power dissipation reaches 2 W when mounted on a standard FR4 PCB.
Feature Summary
- Very low collector-emitter saturation voltage for high energy efficiency
- Exposed heat sink for excellent thermal and electrical conductivity
- High collector current gain at high collector currents
- AEC-Q101 qualified for automotive applications
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- LED lighting
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component marking code matches the datasheet requirements for quality assurance. Confirm RoHS compliance status through the latest product data sheet before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low saturation voltage and high current density in a compact surface-mount footprint. Consider the exposed pad thermal performance when designing the PCB copper area. Verify that the required switching speed and current gain meet the specific circuit demands under expected operating temperatures.
Part Context
This part belongs to the PBSS4160 series of low VCEsat BISS transistors. It serves as the NPN/NPN configuration within the family, complemented by the PNP/PNP variant PBSS5160PAPS and the NPN/PNP version PBSS4160PANPS. All variants share similar electrical characteristics but differ in internal transistor polarity configurations.
Replacement Considerations
Direct replacements include PBSS4160PANPS (NPN/PNP) and PBSS5160PAPS (PNP/PNP). Verify pin compatibility and polarity requirements before substitution. Other packages in the series may require schematic adjustments due to different pinout arrangements.
