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Product Detailed Parameters
- Description：PBSS4230PAN-Q/SOT1118/HUSON6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PBSS4230PAN is a dual NPN Breakthrough In Small Signal (BISS) transistor housed in a leadless DFN2020-6 (SOT1118) package. It features a collector-emitter voltage of 30 V and a continuous collector current of 2 A per transistor, with a peak current capability of 3 A. The device exhibits a maximum collector-emitter saturation resistance of 145 mΩ at 1 A. Thermal performance includes a junction-to-solder point resistance of 30 K/W and a junction temperature limit of 150 °C. The component is qualified to the AEC-Q101 standard for automotive reliability.
Feature Summary
- Dual NPN configuration within a compact leadless plastic package
- Low collector-emitter saturation voltage for high efficiency
- High DC current gain maintained at elevated collector currents
- Automotive grade qualification ensuring robustness
Applications
- Load switch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Confirm that the DFN2020-6 footprint matches the design requirements. Ensure compliance with the AEC-Q101 qualification status if the application demands automotive-grade components. Cross-reference the marking code '2G' for identification during assembly.
Selection Notes
Select this component when a dual NPN topology is required in a minimal footprint. The low saturation resistance makes it suitable for applications prioritizing thermal efficiency. Verify that the 30 V rating accommodates the system voltage peaks. Consider the 150 °C junction temperature limit for high-temperature environments. Evaluate the PCB copper area requirements to manage power dissipation effectively.
Part Context
This part belongs to the BISS transistor family, designed to reduce printed-circuit board requirements through integrated dual configurations. It serves as an alternative to discrete single transistors, saving space. The PNP complement is available as the PBSS4230PANP. The technology focuses on minimizing heat generation while maintaining high current handling capabilities in small signal packages.
Replacement Considerations
Direct functional substitutes include the PBSS4230PANP for complementary PNP/NPN needs. Check the PBSS5230PAP for PNP/PNP configurations. Verify pinout compatibility before replacing existing designs. Ensure the replacement maintains the DFN2020-6 package dimensions and thermal characteristics.
