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Product Detailed Parameters
- Description：TRANS 30V 2A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：-
- Current - Collector (Ic) (Max)：2A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：290mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 1A, 2V
- Power - Max：510mW
- Frequency - Transition：120MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS4230PAN,115 is a dual NPN low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mount package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) rating of 2 A per transistor. Peak collector current (ICM) reaches 3 A for single pulses up to 1 ms. The collector-emitter saturation resistance (RCEsat) is typically 145 mΩ at IC = 1 A and IB = 0.1 A. The transition frequency (fT) is typically 120 MHz.
Feature Summary
- Very low collector-emitter saturation voltage and resistance
- High collector current capability with high gain at high currents
- Reduced printed-circuit board requirements due to efficient thermal design
- AEC-Q101 qualified for automotive applications
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a dual NPN configuration with low saturation voltage is required in a compact footprint. The DFN2020-6 package offers thermal efficiency suitable for space-constrained designs. Ensure the application current does not exceed the 2 A continuous or 3 A peak ratings under specified thermal conditions.
Part Context
This part belongs to the Nexperia BISS transistor family, designed for low power consumption and high efficiency. Complementary configurations include the NPN/PNP PBSS4230PANP and the PNP/PNP PBSS5230PAP. These devices utilize innovative mesh-emitter technology to minimize heat generation while maintaining high current handling capabilities.
Replacement Considerations
Direct pin-compatible replacements within the same package are limited. Evaluate the PBSS4230PANP if a complementary NPN/PNP pair is needed instead of two NPN transistors. Verify thermal dissipation requirements against alternative packages like SOT363 or SOT723 if higher power handling is necessary.
