SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBSS4260PANP-QX is a dual NPN/PNP Breakthrough In Small Signal (BISS) transistor housed in a leadless DFN2020-6 (SOT1118) package. It supports a collector-emitter voltage of 60 V and continuous collector current up to 2 A per transistor, with peak currents reaching 3 A. The device features low saturation resistance, specified at 165 mΩ for the NPN side and 250 mΩ for the PNP side under pulsed conditions. Transition frequencies are rated at 140 MHz for the NPN and 100 MHz for the PNP transistor. It operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against official Nexperia documentation to confirm availability and exact packaging details. Confirm that the automotive grade designation aligns with project requirements before finalizing procurement orders.
Select this component when low saturation voltage and high current gain are critical for power efficiency. Ensure the DFN2020-6 footprint matches the PCB layout constraints. Verify thermal dissipation capabilities based on the specific copper area and layer configuration used in the design.
This part belongs to the Nexperia BISS transistor family, designed for small signal applications requiring high performance in compact packages. It serves as a complement to other variants like the PBSS4130PANP, offering higher voltage and current ratings within the same leadless medium power form factor.
Direct functional substitutes include the PBSS4260PAN and PBSS5260PAP. Verify pin compatibility and electrical parameters against the original datasheet before implementing any cross-references.