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The PBSS4260PANS-Q is a dual NPN transistor in a DFN2020D-6 package. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 2 A, with a peak current (ICM) of 3 A. The device has a maximum power dissipation of 510 mW per device at 25 °C on an FR4 PCB. Key electrical parameters include a DC current gain (hFE) minimum of 120 at 1 A and 2 V, and a transition frequency (fT) of 140 MHz. The saturation resistance (RCEsat) is 200 mΩ at 1 A collector current.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the marking code '3L' with the datasheet to validate authenticity upon receipt.
Select this component when a dual NPN configuration with low saturation voltage is required for space-constrained designs. The DFN2020D-6 package offers a compact footprint suitable for high-density boards. Ensure the thermal design accounts for the junction-to-ambient resistance values provided in the datasheet under your specific PCB copper layer conditions.
This part belongs to the PBSS4260 series of low VCEsat double transistors manufactured by Nexperia. It serves as the NPN/NPN variant within this family, complemented by the PNP/PNP version, the PBSS5260PAPS. The series is designed for general-purpose switching and power management applications requiring high efficiency and robust performance.
The PBSS4260PAN is a related variant in the same series but utilizes a different HUSON6 package. Verify pinout compatibility and thermal characteristics before substitution. No other direct equivalent part numbers are documented in the provided source material.