PBSS4350SS,115

$0.51

Description：TRANS 2NPN DUAL 50V 2.7A 8-SO
Series：-

SKU:c7eb0949d6b7 Category: Bipolar Transistor Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN DUAL 50V 2.7A 8-SO
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：2.7A
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：340mV @ 270mA, 2.7A
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 1A, 2V
Power - Max：2W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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PBSS4350SS,115

Overview

The PBSS4350SS,115 is an NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a SOT96-1 (SO8) plastic small outline package with 8 leads and a body width of 3.9 mm. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 2.7 A per transistor. Peak collector current (ICM) reaches 5 A for single pulses up to 1 ms. The collector-emitter saturation resistance (RCEsat) is typically 90 mΩ at IC = 2 A and IB = 200 mA. Total power dissipation varies from 0.55 W to 1.43 W depending on the PCB mounting conditions.

Feature Summary

Low collector-emitter saturation voltage for high efficiency
High collector current capability for both continuous and peak operation
High DC current gain at elevated collector currents
Reduced printed-circuit board area requirements compared to conventional transistors

Applications

Dual low power switches such as motors and fans
Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packing quantity and tape-and-reel specifications. Confirm that the component marking code matches the expected identifier for this part number before integration into production workflows.

Selection Notes

Select this component when dual NPN switching functionality is required within a compact surface-mount footprint. Evaluate thermal performance based on the specific FR4 or ceramic PCB mounting pad configuration, as total power dissipation ratings vary significantly with heat sinking capabilities.

Part Context

This device belongs to the BISS transistor family designed for low saturation voltage applications. It serves as a dual-transistor alternative to discrete single NPN packages, offering space savings. The SO8 package provides robust mechanical stability for automated assembly processes.