PBSS4350SSJ

Overview

The PBSS4350SS is a dual NPN low VCEsat Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) plastic package. It features two independent transistors with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 2.7 A per device. The peak collector current (ICM) reaches 5 A for single pulses up to 1 ms. Key electrical parameters include a typical DC current gain (hFE) of 300 to 520 at IC = 100 mA, and a collector-emitter saturation resistance (RCEsat) of 90 mΩ typ at IC = 2 A and IB = 200 mA. Total power dissipation varies from 0.55 W to 2 W depending on the mounting conditions.

Feature Summary

• Dual NPN configuration within a single SO8 package for space-efficient designs
• Low collector-emitter saturation voltage to minimize conduction losses
• High collector current capability supporting up to 2.7 A continuous operation
• High current gain maintained at elevated collector currents

Applications

• Dual low power switches for motors and fans
• Automotive electronic circuits
• General switching applications requiring compact dual-transistor solutions

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packing quantity and tape-and-reel specifications. Confirm that the SOT96-1 package variant matches the required PCB footprint dimensions. Check for RoHS compliance status and any recent product change notices that may affect pin compatibility or marking codes before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration is required in a surface-mount form factor. Ensure the thermal design accounts for the specified junction-to-ambient resistance values based on the intended PCB copper area. Verify that the base drive current is sufficient to achieve the low saturation voltage characteristics defined in the datasheet for the target load current.

Part Context

This device belongs to Nexperia's BISS transistor family, designed for high efficiency in small-signal switching. It serves as a dual alternative to single NPN transistors, reducing board space. The PNP complement is available as the PBSS5350SS. The SO8 package allows for standard surface-mount assembly processes compatible with reflow soldering profiles defined for small outline packages.

Replacement Considerations

Direct functional substitutes include other dual NPN BISS transistors in SO8 packages such as the PBSS4350SPN. Verify pinout compatibility and electrical limits before substitution. Single NPN replacements require two separate components and additional board space.