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Product Detailed Parameters
- Description：TRANS 2PNP 30V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：280mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 2V
- Power - Max：370mW
- Frequency - Transition：125MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PBSS5130PAP-Q is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted package. The device features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -1 A, with a peak pulse current (ICM) of -2 A. Key electrical characteristics include a maximum collector-emitter saturation resistance (RCEsat) of 250 mΩ at IC = -1 A and IB = -0.1 A. The DC current gain (hFE) ranges from 120 to 350 depending on the collector current. The component is qualified according to AEC-Q101 standards for automotive applications.
Feature Summary
- Very low collector-emitter saturation voltage for high efficiency
- High collector current capability for power switching
- High DC current gain at elevated collector currents
- AEC-Q101 qualified for automotive reliability
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability. Ensure that the procurement channel provides valid traceability for AEC-Q101 qualified components intended for automotive use. Cross-reference the marking code '2E' with the datasheet to authenticate the physical device upon receipt.
Selection Notes
Select this component when a dual PNP configuration with low saturation voltage is required in a compact DFN2020-6 footprint. Consider the thermal resistance values provided for different PCB copper weights and layer counts to ensure adequate heat dissipation. Verify that the required collector current and voltage ratings align with the circuit's operational limits and transient conditions.
Part Context
This part belongs to Nexperia's BISS (Breakthrough In Small Signal) transistor family, designed for low VCEsat performance. It serves as the PNP/PNP complement to the PBSS4130PANP (NPN/PNP) and PBSS4130PAN (NPN/NPN) variants within the same series. The Q-suffix indicates qualification according to AEC-Q101 automotive standards.
Replacement Considerations
Direct functional equivalents within the same package and specification range include the non-automotive grade PBSS5130PAP. Designers should verify pinout compatibility and thermal characteristics when substituting between the standard and automotive qualified versions.
FAQ
What is the marking code for the PBSS5130PAP-Q?
The marking code for the PBSS5130PAP-Q is 2E.
Is the PBSS5130PAP-Q suitable for automotive applications?
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum peak collector current for this transistor?
The maximum peak collector current (ICM) is -2 A for a single pulse with a duration of tp ≤ 1 ms.
