PBSS5140V,315

Single Bipolar Transistors Overview

The PBSS5140V is a PNP low VCEsat transistor in a SOT666 plastic package. It features a collector-emitter voltage (VCEO) of -40 V and a DC collector current (IC) of -1 A. The device has a total power dissipation of 300 mW at 25 °C on a standard footprint, rising to 500 mW with an extended collector pad. Key electrical characteristics include a transition frequency (fT) of 150 MHz and a collector-base cut-off current (ICBO) of 100 nA at 150 °C. The equivalent on-resistance (RCEsat) is less than 340 mΩ.

Single Bipolar Transistors Feature Summary

• Ultra-thin SOT666 package with flat leads for improved thermal behavior and self-alignment during soldering.
• Low collector-emitter saturation voltage for enhanced efficiency.
• High current capability supporting general purpose switching applications.

Single Bipolar Transistors Applications

• General purpose switching and muting
• LCD back lighting
• Supply line switching circuits
• Battery driven equipment

Single Bipolar Transistors Procurement Notes

Verify the component status as production data sheet content. Confirm the manufacturer designation reflects the Nexperia business unit transition from NXP Standard Products. Ensure the ordering code matches the specific suffix requirements for the SOT666 package variant. Check for any updates regarding the product status or superseded documentation versions before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact PNP transistor with low saturation voltage. The SOT666 package offers a small footprint suitable for space-constrained mobile and handheld devices. Consider the thermal resistance values when designing heat dissipation strategies, particularly if operating near the maximum power dissipation limits under varying ambient temperature conditions.

Single Bipolar Transistors Part Context

This device belongs to the series of low VCEsat PNP transistors designed for high-efficiency switching. It serves as the complement to the NPN PBSS4140V. The technology focuses on reducing heat generation through improved reliability and lower voltage drops compared to standard packaged transistors, making it suitable for battery-driven consumer electronics.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PBSS4140V. Verify pinout compatibility and thermal characteristics when substituting with other SOT666 PNP transistors. Ensure that alternative components meet the same -40 V voltage rating and -1 A current handling capabilities required by the original design specifications.