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The PBSS5220PAPS-Q is a PNP/PNP low VCEsat double transistor manufactured by Nexperia. It is housed in a leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device plastic package with visible and solderable side pads. The device features a collector-emitter voltage of -20 V, a continuous collector current of -2 A per transistor, and a peak collector current of -3 A. It includes an exposed heat sink for thermal management and is qualified according to AEC-Q101 standards.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. Ensure that the component meets all automotive qualification requirements specified in the datasheet before finalizing procurement plans.
Select this component when a dual PNP configuration with low saturation voltage is required in a compact footprint. Consider the DFN2020D-6 package dimensions and thermal resistance characteristics relative to the PCB layout and ambient operating conditions.
This part belongs to Nexperia's portfolio of low VCEsat double transistors designed for high-efficiency power switching applications. It serves as a complement to NPN/NPN variants within the same product family, offering matched performance characteristics for complementary circuit designs.
The NPN/NPN complement is identified as PBSS4220PANS. Verify pin compatibility and electrical parameters before substituting with other manufacturers' equivalents.
The maximum collector-emitter voltage (VCEO) is -20 V.
Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
It uses a leadless medium power DFN2020D-6 (SOT1118D) SMD plastic package with side-wettable flanks.