PBSS5230PAP-QX

Overview

The PBSS5230PAP is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mount package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -2 A, with a peak pulse current (ICM) of -3 A. Key electrical characteristics include a typical DC current gain (hFE) of 145 at IC = -2 A and VCE = -2 V, and a collector-emitter saturation resistance (RCEsat) of 195 mΩ at IC = -1 A. The transition frequency (fT) is typically 95 MHz.

Feature Summary

• Very low collector-emitter saturation voltage for high efficiency
• High collector current capability with elevated current gain at high currents
• Reduced printed-circuit board area requirements compared to conventional transistors
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Load switch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape-and-reel specifications. Confirm that the DFN2020-6 footprint matches the design intent, as thermal performance varies significantly based on PCB copper area and layer count. Cross-reference the AEC-Q101 qualification status if the application requires automotive-grade reliability assurance.

Selection Notes

Select this component when space constraints necessitate a leadless package while maintaining high current handling capabilities. The dual-transistor configuration allows for complementary or parallel operations within a minimal footprint. Ensure the thermal design accounts for the junction-to-ambient resistance values provided for specific PCB copper weights and layer configurations to prevent overheating during continuous operation.

Part Context

This part belongs to the BISS transistor family, designed to offer superior performance over standard bipolar junction transistors in compact packages. It serves as a PNP/PNP complement to other variants in the series, such as the NPN/NPN PBSS4230PAN. The technology focuses on minimizing saturation voltage to reduce power loss in switching applications.

Replacement Considerations

Direct functional substitutes include the PBSS5230QAZ, which shares similar electrical ratings but utilizes a different 3DFN package. Designers must verify pinout compatibility and thermal dissipation characteristics when swapping between the DFN2020-6 and alternative package types.