PBSS5230PAP,115

Overview

The PBSS5230PAP is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -2 A, with a peak pulse current (ICM) of -3 A. Key electrical characteristics include a typical collector-emitter saturation resistance (RCEsat) of 195 mΩ at IC = -1 A and IB = -0.1 A. The component operates within a junction temperature range up to 150 °C and has been qualified according to the AEC-Q101 standard for automotive applications.

Feature Summary

• Very low collector-emitter saturation voltage for high energy efficiency
• High collector current capability with reduced PCB thermal requirements
• AEC-Q101 qualified for automotive reliability

Applications

• Load switch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape width. Ensure the requested part number matches the exact marking code '2H' and package type DFN2020-6. Confirm that the supplier provides traceability to the original manufacturer's production lot. Check for any recent revision history updates that may affect pinning or thermal data.

Selection Notes

Select this component when low saturation voltage is critical for minimizing power loss in high-current paths. The dual PNP structure allows for complementary switching configurations within a single package. Consider the DFN2020-6 footprint for space-constrained designs requiring enhanced thermal dissipation through the exposed pad. Verify base drive capabilities to ensure sufficient current is available to maintain low RCEsat at the target load current.

Part Context

This device belongs to the BISS (Breakthrough In Small Signal) transistor family from Nexperia, designed to offer superior performance compared to standard small-signal transistors. It serves as the PNP/PNP variant, complementing the NPN/NPN PBSS4230PAN and the NPN/PNP PBSS4230PAN. The technology focuses on reducing heat generation while maintaining robust current handling in a compact form factor suitable for modern portable electronics.

Replacement Considerations

Direct functional equivalents include the PBSS4230PAN (NPN/PNP) and PBSS4230PANP (NPN/NPN) from the same series. For single-transistor replacements, verify if the PBSS5230QAZ meets the thermal and voltage requirements, noting the package difference between DFN2020-6 and DFN1010D-3.