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The PBSS5260PAP is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted device plastic package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current (IC) of -2 A, with a peak collector current (ICM) of -3 A for single pulses up to 1 ms. Key electrical characteristics include a maximum collector-emitter saturation resistance (RCEsat) of 250 mΩ at IC = -1 A and IB = -100 mA. The total power dissipation (Ptot) reaches 960 mW when mounted on an FR4 PCB with a standard footprint at Tamb ≤ 25 °C. The junction temperature range extends from -55 °C to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required automotive qualification standards if intended for vehicle electronics. Cross-reference the datasheet revision history to ensure the latest product data sheet is used for design validation and compliance checks.
Select this component for designs requiring dual PNP transistors in a compact DFN2020-6 package. Ensure the application operates within the -60 V collector-emitter voltage limit and -2 A continuous current rating. Consider the thermal resistance values provided for different PCB copper weights and layer counts to manage heat dissipation effectively under expected load conditions.
This part belongs to Nexperia's BISS transistor family, designed for low saturation voltage performance. The NPN/PNP complement is the PBSS4260PA, while the NPN/NPN complement is the PBSS4260PAN. The marking code for identification on the package is '2P'.
Publicly confirmed substitute part numbers are not available in the provided source material.