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PC3H510NIP is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Sharp Microelectronics. Its product description is OPTOISO 2.5KV DARL 4-MINI-FLAT. Review the specifications below when checking this part for your BOM.
The PC3H510NIP is a transistor output optocoupler manufactured by Sharp Microelectronics. It features a single channel with an NPN phototransistor output and operates in a 4-Mini-Flat surface-mount package. The device provides 2500 Vrms isolation voltage. Key electrical parameters include a collector-emitter saturation voltage of 200 mV maximum, a forward current of 10 mA, and a forward voltage of 1.4 V typical. The current transfer ratio ranges from 100% to 700%. It supports a maximum collector current of 2.5 mA and a collector-emitter voltage of 80 V. Operating temperatures range from -30°C to +100°C.
Verify the specific suffix and RoHS compliance status against the latest manufacturer datasheet before procurement. Confirm that the 4-Mini-Flat package dimensions match the target PCB footprint. Ensure the supplier provides authentic components with traceable lot codes to guarantee performance reliability in safety-critical applications.
Select this component when a compact form factor is required alongside moderate speed and high isolation voltage. Compare the 2.5 mA collector current limit against load requirements. Consider the 100-700% CTR range for biasing stability. Evaluate the 4-Mini-Flat package against available board space constraints relative to standard SOIC or DIP alternatives.
This part belongs to the Sharp PC3H series of transistor output optocouplers. The series is designed for general-purpose isolation tasks requiring small footprints. The Mini-Flat package variant offers a reduced profile compared to traditional SOIC packages while maintaining similar electrical characteristics for signal isolation.
Direct pin-to-pin replacements are limited due to the unique Mini-Flat package. Verify compatibility with alternative manufacturers offering equivalent isolation voltages and current transfer ratios. Mechanical re-design may be necessary if substituting with standard SOIC or DIP packages.
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