PCDH20120CCG1_T0_00601

$12.68

Description：DIODE ARR SIC 1200V 10A TO-247AD
Series：-

SKU:258cc657cd5a Category: Diode Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 10A TO-247AD
Series：-
Mfr：Panjit International Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：10A (DC)
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：100 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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PCDH20120CCG1_T0_00601

Overview

The PCDH20120CCG1_T0_00601 is a Silicon Carbide Schottky Barrier Diode manufactured by Panjit International Inc. It features a common cathode configuration with two diodes in a single package. The device supports a maximum repetitive peak reverse voltage of 1200V and a continuous forward current of 10A per diode. It utilizes a TO-247-3 through-hole package, designed for high-power applications requiring low switching losses and high thermal stability.

Feature Summary

Utilizes silicon carbide material for superior thermal performance and high-temperature operation capabilities
Features a common cathode dual-diode structure to simplify circuit design and reduce component count
Designed for ultra-fast switching characteristics typical of Schottky barrier technology

Applications

High-frequency power supply circuits
Industrial motor drive systems
Uninterruptible power supply (UPS) units
Solar inverter applications

Procurement Notes

Verify the specific suffix _T0_00601 against official Panjit documentation to confirm tape and reel packaging specifications. Ensure the ordering part number matches the exact electrical ratings and package type required for your design. Cross-reference with authorized distributors to confirm current availability and lead times, as inventory levels for specialized SiC components may fluctuate.

Selection Notes

Select this component when designing circuits that demand high voltage blocking capability combined with low forward voltage drop. The TO-247-3 package facilitates efficient heat dissipation for high-current applications. Consider the thermal resistance characteristics and ensure adequate heatsinking is implemented to maintain junction temperatures within safe operating limits during continuous operation.

Part Context

This part belongs to Panjit's Silicon Carbide Schottky Diode portfolio, targeting high-efficiency power conversion markets. It complements other wide-bandgap devices offered by the manufacturer, providing solutions for next-generation power electronics that require higher efficiency and smaller form factors compared to traditional silicon-based rectifiers.