PCDH40120CCG1_T0_00601

Overview

The PCDH40120CCG1_T0_00601 is a Silicon Carbide Schottky Barrier Diode array manufactured by Panjit International Inc. It features a common cathode configuration with one pair of diodes housed in a TO-247-3 through-hole package. The device supports a maximum repetitive peak reverse voltage of 1200 V and an average forward current of 20 A (DC). Key electrical specifications include a maximum reverse leakage current of 180 µA at 1200 V and a zero reverse recovery time, characteristic of SiC technology. The junction operating temperature range extends from -55°C to 175°C.

Feature Summary

• Utilizes Silicon Carbide material for superior thermal performance and high-temperature operation up to 175°C junction temperature.
• Features a common cathode dual-diode configuration within a single TO-247-3 through-hole package for space-efficient design.
• Exhibits zero reverse recovery time, eliminating switching losses and reducing electromagnetic interference during high-frequency operation.

Applications

• High-voltage DC-DC converters
• Uninterruptible power supply (UPS) systems
• Industrial motor drives

Procurement Notes

Verify the specific suffix T0_00601 against the manufacturer's official datasheet to confirm packaging details and marking codes. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the part number with Panjit International Inc. directly to validate current production status and lead times before finalizing orders.

Selection Notes

Select this component for applications requiring high blocking voltage and minimal switching losses. The 1200V rating suits medium-to-high voltage circuits. Consider the TO-247-3 package for robust mechanical mounting and heat dissipation. Evaluate the 20A DC current rating against peak load requirements to ensure adequate safety margins under thermal constraints.

Part Context

This part belongs to Panjit’s Silicon Carbide Schottky Diode series, designed for efficiency in power conversion. It complements other high-voltage SiC devices in the portfolio, offering enhanced reliability compared to traditional silicon counterparts. The common cathode arrangement allows for bridge rectifier or synchronous rectification topologies without external discrete components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult Panjit International Inc. technical support for direct equivalents or pin-compatible alternatives with matching voltage and current ratings.