PCDH4065CCG1_T0_00601

PCDH4065CCG1_T0_00601

$11.56
  • Description:DIODE ARR SIC 650V 20A TO-247AD
  • Series:-

SKU:ac2317740f76 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARR SIC 650V 20A TO-247AD
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):20A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:120 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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PCDH4065CCG1_T0_00601

Overview

The PCDH4065CCG1_T0_00601 is a silicon carbide (SiC) Schottky barrier diode manufactured by Panjit International Inc. It features a 650V repetitive reverse voltage rating and a 20A average forward rectified current capability in a radial leaded package. The device utilizes SiC technology to achieve low forward voltage drop and high thermal stability, supporting operation up to a maximum junction temperature of 175°C.

Feature Summary

  • Utilizes Silicon Carbide (SiC) material for superior thermal performance compared to traditional silicon devices
  • Features a Schottky barrier structure to minimize switching losses and reverse recovery charge
  • Designed with a robust radial leaded package configuration for through-hole mounting applications

Applications

  • High-frequency power supply circuits
  • Industrial motor drive systems
  • Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific suffix T0_00601 against official Panjit documentation to confirm exact packaging and tape specifications. Ensure compatibility with existing board layouts requiring radial leaded components. Cross-reference datasheet electrical limits with system operating conditions to prevent overstress during transient events.

Selection Notes

Select this component when high-temperature operation and reduced switching losses are critical requirements. The SiC construction offers advantages over standard silicon rectifiers in efficiency-sensitive designs. Evaluate thermal management needs based on the 20A current rating and ensure adequate heat dissipation for continuous operation within specified temperature ranges.

Part Context

This part belongs to Panjit's silicon carbide diode portfolio, targeting applications demanding higher efficiency and reliability than conventional silicon solutions allow. The radial leaded form factor distinguishes it from surface-mount alternatives within the same voltage and current class, facilitating integration into legacy or specific industrial chassis designs.

Replacement Considerations

Consult official Panjit substitution guides for verified equivalents. Direct replacements must match the 650V rating, 20A current capacity, and radial leaded package type. Verify that alternative SiC diodes maintain comparable thermal characteristics and switching performance metrics.

PCDH4065CCG1_T0_00601PCDH4065CCG1_T0_00601
$11.56
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