PCFG25T120SQF

PCFG25T120SQF

  • Description:IGBT FIELD STOP 1200V WAFER
  • Series:-

SKU:5b699e842311 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FIELD STOP 1200V WAFER
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 25A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:136 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Wafer
  • Grade:-
  • Qualification:-

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PCFG25T120SQF

Overview

The PCFG25T120SQF is a bare die IGBT component from onsemi, utilizing Trench Ultra Field Stop technology. It is rated for 1200V collector-emitter voltage and 25A continuous current. Designed for high-efficiency applications, this silicon device supports operating temperatures from -40°C to +150°C. It is specifically optimized for Uninterruptible Power Supply (UPS) and solar energy systems.

Feature Summary

  • Incorporates Trench Ultra Field Stop technology for enhanced efficiency
  • Engineered as a bare die for custom power module integration
  • Optimized performance characteristics for renewable energy infrastructure

Applications

  • Uninterruptible Power Supply (UPS) systems
  • Solar power inverters
  • Industrial energy infrastructure modules

Procurement Notes

Verify the specific datasheet version and technical specifications directly with onsemi or authorized distributors before procurement. Confirm that the bare die format aligns with your assembly capabilities and thermal management requirements. Ensure compliance with RoHS directives and check for any lifecycle status changes, such as NRND designations, which may impact long-term supply availability.

Selection Notes

Select this component when designing custom power modules requiring high-voltage handling and efficient switching in UPS or solar applications. The bare die format necessitates careful consideration of substrate selection, wire bonding processes, and thermal interface materials. Evaluate system-level thermal resistance and electrical isolation requirements to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to onsemi's portfolio of intelligent power solutions, specifically within the IGBT module category. It represents the company's focus on advanced silicon technologies for industrial and renewable energy markets. The product complements other discrete and module offerings by providing a foundational building block for high-performance power conversion systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consider evaluating other onsemi Trench Ultra Field Stop IGBT dies or comparable high-voltage bare die solutions from alternative manufacturers based on specific voltage, current, and thermal requirements.

PCFG25T120SQFPCFG25T120SQF

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