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PCFG40N120ANF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PCFG40N120ANF
- Description：MOSFET N-CH
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for PCFG40N120ANF
Single FETs, MOSFETs Overview
The PCFG40N120ANF is an N-channel enhancement-mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 58 A at 25°C. The device utilizes a TO-247 package with four pins for through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 56 mΩ and a typical gate charge (Qg) of 106 nC at the specified gate-source voltage. The component operates within a temperature range from -50°C to +170°C, with a maximum power dissipation (Pd) of 319 W.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1200 V breakdown rating suitable for demanding power applications
- Low on-resistance design to minimize conduction losses and improve efficiency
- Robust thermal performance supporting operation up to 170°C junction temperature
Single FETs, MOSFETs Applications
- Industrial motor drives and inverters
- High-efficiency switched-mode power supplies
- Uninterruptible power supply (UPS) systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ANF' against the official onsemi datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides genuine components with traceable origin. Check for RoHS compliance status if required by your assembly process. Confirm the package type matches your PCB footprint requirements before ordering.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high blocking voltage and moderate current handling in a through-hole package. Compare Rds(on) and gate charge specifications against alternative devices to optimize switching losses. Consider the thermal resistance of the TO-247 package for adequate heat sinking solutions. Evaluate the operating temperature range to ensure reliability under worst-case environmental conditions.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's discrete power transistor portfolio, specifically designed for high-voltage switching applications. It complements other IGBT and MOSFET offerings in their industrial and automotive segments. The TO-247 form factor is standard for medium-power discrete semiconductors requiring robust mechanical mounting and efficient thermal management.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications. Verify that alternative parts meet the same thermal and electrical performance criteria.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
