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Product Detailed Parameters
- Description：DIODE MODULE GP 800V 250A MODULE
- Series：-
- Mfr：KYOCERA AVX
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io) (per Diode)：250A
- Voltage - Forward (Vf) (Max) @ If：1.57 V @ 800 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：17 mA @ 800 V
- Operating Temperature - Junction：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The PD250KN8A is a discrete Insulated Gate Bipolar Transistor (IGBT) module manufactured by KYOCERA AVX. It belongs to the category of transistor-IGBT-modules and is designed as a high-performance power semiconductor device. The component complies with RoHS standards and is lead-free, ensuring environmental safety for electronic assemblies.
Feature Summary
- High-performance power semiconductor construction
- RoHS compliant and lead-free manufacturing
Applications
- General power electronics applications requiring IGBT modules
Procurement Notes
Verify the specific datasheet for detailed electrical characteristics, thermal resistance values, and mechanical dimensions before integration. Confirm that the RoHS compliance status meets current regulatory requirements for your target market. Ensure proper handling procedures are followed due to the sensitive nature of power semiconductor components.
Selection Notes
Select this component when a robust, lead-free IGBT solution is required for power conversion tasks. Consider its classification as a discrete module rather than an integrated circuit package. Evaluate thermal management needs based on the specific application's power dissipation requirements.
Part Context
KYOCERA AVX produces advanced electronic components including capacitors, resistors, filters, connectors, sensors, antennas, and power solutions. The PD250KN8A falls within their portfolio of power semiconductors, specifically IGBT modules, supporting industrial and automotive innovation.
Replacement Considerations
No public substitute part numbers are documented for this specific model.
