SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA113EK,115 is a PNP resistor-equipped transistor (RET) manufactured by NXP Semiconductors. It integrates a single PNP bipolar junction transistor with two built-in bias resistors in an SOT-346 surface-mount package. The device features typical internal resistance values of 10 kOhms for both the base resistor (R1) and the emitter-base resistor (R2). Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 30. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix '115' against official NXP documentation to confirm tape-and-reel packaging details and RoHS compliance status. Confirm availability as distribution listings may indicate limited stock or end-of-life status. Ensure the SOT-346 footprint matches the target PCB layout before ordering.
Select this component when a compact PNP switching solution with integrated biasing is required. The 10k/10k resistor ratio suits standard logic interface applications. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the SOT-346 package constraints for thermal management and assembly density.
This part belongs to the PDTA series of resistor-equipped transistors from NXP Semiconductors. These devices are designed to replace discrete transistor and resistor networks, offering a cost-effective and space-saving alternative for biasing applications in consumer electronics and industrial control systems.
Compatible substitutes include other PNP RETs with similar 10k/10k bias ratios and SOT-346 packaging, such as the PDTC113EK from Nexperia or equivalent parts from Onsemi. Verify pinout compatibility and electrical parameters before substitution.