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The PDTA113EM,315 is a PNP Resistor-Equipped Transistor (RET) from the PDTA113E series, manufactured by Nexperia. It integrates a single PNP transistor with two built-in bias resistors: R1 (input/base) and R2 (base/emitter). The component utilizes the SOT883 (SC-101) leadless ultra-small plastic package, measuring 1.0 x 0.6 x 0.5 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a DC output current (IO) of -100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The nominal resistance for both R1 and R2 is 1 kΩ.
Verify the ordering suffix '315' corresponds to the specified packing method in official Nexperia documentation before procurement. Confirm that the SOT883 package variant matches the required footprint for the target printed-circuit board layout. Ensure compatibility with reflow soldering processes as recommended for this device type.
Select the PDTA113EM when a compact PNP RET solution is required for space-limited designs. The SOT883 package offers a smaller footprint compared to standard SMD packages like SOT23 or SOT323. Verify that the 1 kΩ internal resistor values align with the specific base drive requirements of the application circuit.
The PDTA113EM belongs to the broader PDTA113E series of PNP Resistor-Equipped Transistors. This series includes multiple package options such as SOT416, SOT346, SOT54, SOT23, and SOT323. The EM suffix specifically denotes the SOT883 leadless package variant, distinguishing it from other physical form factors within the same electrical family.
Direct substitutes include other PDTA113E series variants with different packages, such as PDTA113ET (SOT23) or PDTA113EU (SOT323), provided the PCB footprint can be adapted. Cross-brand equivalents should match the PNP configuration, -50 V rating, and 1 kΩ/1 kΩ resistor values.