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The PDTA113EMB,315 is a PNP resistor-equipped transistor manufactured by Nexperia USA Inc. It integrates a single PNP transistor with a built-in bias resistor (R1 = 4.7 kΩ) within a DFN1006-3 package (SOT883). The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Total power dissipation is rated at 250 mW, with a maximum junction temperature of 150°C. The component is qualified under the AEC-Q101 automotive standard.
Verify the specific ordering code PDTA113EMB,315 against official Nexperia documentation to confirm availability and lead times. Ensure the DFN1006-3 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.
Select this component when space-constrained designs require a PNP switch with integrated base biasing. The 4.7 kΩ internal resistor eliminates external components, reducing board area. Confirm that the 100 mA current rating and 50 V voltage limits meet the specific load requirements of the application circuit.
This part belongs to the PDTA series of PNP resistor-equipped transistors from Nexperia. It serves as a compact alternative to discrete transistor-resistor combinations, particularly suited for high-density consumer and automotive electronics where minimizing component count is critical for manufacturing efficiency.
Direct substitutes include other PNP resistor-equipped transistors with similar 4.7 kΩ bias resistance and 50 V ratings in compatible packages, such as variants from the same Nexperia family or equivalent offerings from other manufacturers providing identical electrical characteristics.