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The PDTA113ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP transistor with built-in bias resistors R1 and R2, both specified at 1 kΩ nominal value within a tolerance range of 0.7 to 1.3 kΩ. The device features a collector-emitter voltage (VCEO) rating of -50 V and a maximum DC output current (IO) of -100 mA. Total power dissipation is rated at 250 mW when the ambient temperature is 25 °C or lower. The component is housed in a SOT23 (TO-236AB) plastic surface-mounted package with three leads.
Verify the specific ordering suffix against official Nexperia documentation to confirm the exact package variant and manufacturing origin. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production lines. Ensure that the selected supplier provides traceability data consistent with the manufacturer's quality standards for discrete semiconductors.
Select this component when a compact PNP switching solution with integrated base biasing is required. The fixed 1 kΩ resistor values are suitable for standard logic interface applications. Consider the thermal resistance characteristics of the SOT23 package for heat dissipation planning in dense PCB layouts where space optimization is critical.
This part belongs to the PDTA113E series of PNP Resistor-Equipped Transistors. The 'ET' designation specifically identifies the SOT23 (TO-236AB) surface-mount package configuration. Other variants in the series include different package types such as SOT416, SOT346, and SOT883, offering flexibility for various board space constraints while maintaining identical electrical performance characteristics.
The NPN complement PDTC113ET serves as the counterpart for complementary circuit designs. Verify pinout compatibility if substituting with other RET families, as lead configurations may vary between different package styles within the same series.