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The PDTA113ZM,315 is a PNP resistor-equipped transistor from the PDTA113Z series manufactured by Nexperia USA Inc. It integrates bias resistors to simplify circuit design and reduce component count. The device operates with a collector-emitter voltage of -50 V and a maximum DC output current of -100 mA. Key electrical parameters include an input bias resistor (R1) of 1 kΩ and a bias resistor ratio (R2/R1) of 10. It is housed in the SOT883 package (SC-101), featuring a leadless ultra-small plastic body measuring 1.0 x 0.6 x 0.5 mm.
Verify the specific ordering suffix ',315' corresponds to the required packing method, which indicates a 2 mm pitch, 8 mm tape and reel configuration for the SOT883 package. Confirm that the marking code 'G3' matches the physical component received. Ensure compliance with RoHS standards as indicated in the product data sheet before finalizing procurement specifications.
Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. The SOT883 package offers a small footprint suitable for surface-mount assembly. Verify that the -50 V collector-emitter voltage and -100 mA current ratings align with the target application requirements. Consider the thermal resistance characteristics if operating near ambient temperature limits.
This part belongs to the PDTA113Z series of PNP resistor-equipped transistors. It serves as the PNP complement to the PDTC113ZM NPN variant within the same family. The series includes multiple package options such as SOT416, SOT346, SOT54, SOT23, and SOT323, allowing designers to choose the most appropriate form factor for their specific PCB layout and manufacturing constraints.
The direct NPN complement within the same series is the PDTC113ZM. For alternative packages in the same series, consider PDTA113ZE (SOT416), PDTA113ZK (SOT346), or PDTA113ZT (SOT23). Ensure any substitute maintains the same R1 value of 1 kΩ and R2/R1 ratio of 10 to preserve circuit functionality.