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The PDTA113ZMB,315 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP transistor with built-in bias resistors R1 (1 kΩ) and R2 (10 kΩ) in a leadless ultra-small DFN1006B-3 (SOT883B) plastic package. The device supports an output current of 100 mA and a collector-emitter voltage of -50 V. Key electrical characteristics include a DC current gain (hFE) of 35 at -5 mA/-5 V, a saturation voltage of 150 mV at -10 mA/-0.5 mA, and a transition frequency of 180 MHz. Total power dissipation is rated at 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix ,315 against the manufacturer's latest documentation to confirm packaging orientation and reel specifications. Confirm that the DFN1006B-3 footprint matches the target PCB design requirements. Ensure compliance with RoHS directives as indicated in the product data sheet before finalizing procurement orders.
Select this component when space constraints require a leadless package with integrated biasing. The 1 kΩ input resistor and 10 kΩ feedback resistor are fixed; verify these values align with the required logic interface levels. Consider the 250 mW power dissipation limit and thermal resistance characteristics for high-temperature operating environments.
This part belongs to the PDTA113Z series of PNP resistor-equipped transistors. The NPN complement for this device is the PDTC113ZMB. Both devices utilize the same DFN1006B-3 (SOT883B) package and share similar electrical characteristics adapted for their respective polarities.
PDTC113ZMB