PDTA113ZMB,315

PDTA113ZMB,315

$0.03
  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-

SKU:2087cb3827f0 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:180 MHz
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:3-XFDFN
  • Supplier Device Package:DFN1006B-3

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PDTA113ZMB,315

Overview

The PDTA113ZMB,315 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP transistor with built-in bias resistors R1 (1 kΩ) and R2 (10 kΩ) in a leadless ultra-small DFN1006B-3 (SOT883B) plastic package. The device supports an output current of 100 mA and a collector-emitter voltage of -50 V. Key electrical characteristics include a DC current gain (hFE) of 35 at -5 mA/-5 V, a saturation voltage of 150 mV at -10 mA/-0.5 mA, and a transition frequency of 180 MHz. Total power dissipation is rated at 250 mW at 25 °C ambient temperature.

Feature Summary

  • Integrates PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
  • Features a leadless ultra-small SMD plastic package with a low profile height of 0.37 mm.
  • Qualified for automotive applications according to the AEC-Q101 standard.

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Mobile applications

Procurement Notes

Verify the specific ordering suffix ,315 against the manufacturer's latest documentation to confirm packaging orientation and reel specifications. Confirm that the DFN1006B-3 footprint matches the target PCB design requirements. Ensure compliance with RoHS directives as indicated in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a leadless package with integrated biasing. The 1 kΩ input resistor and 10 kΩ feedback resistor are fixed; verify these values align with the required logic interface levels. Consider the 250 mW power dissipation limit and thermal resistance characteristics for high-temperature operating environments.

Part Context

This part belongs to the PDTA113Z series of PNP resistor-equipped transistors. The NPN complement for this device is the PDTC113ZMB. Both devices utilize the same DFN1006B-3 (SOT883B) package and share similar electrical characteristics adapted for their respective polarities.

Replacement Considerations

PDTC113ZMB

PDTA113ZMB,315PDTA113ZMB,315
$0.03
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