SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA114EK,115 is a PNP resistor-equipped transistor (RET) from the PDTA114E series manufactured by Nexperia USA Inc. It integrates two internal bias resistors, R1 and R2, both with a nominal value of 10 kΩ, into a single SOT346 surface-mount package. The device features a collector-emitter voltage rating of 50 V and a maximum DC output current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at -5 mA collector current and a maximum collector-emitter saturation voltage of 150 mV under specified conditions.
Verify the specific ordering suffix '115' against the manufacturer's latest documentation to confirm packaging details and manufacturing origin. Ensure compatibility with the SOT346 footprint during PCB layout. Confirm RoHS compliance status through official datasheets prior to final procurement decisions.
Select this component when space constraints require integrated biasing solutions. The SOT346 package offers a compact form factor suitable for dense layouts. Verify that the 10 kΩ internal resistor values align with the required base drive currents for the target application logic levels.
This part belongs to the PDTA114E series of PNP resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and TO-92. The PDTA114EK specifically utilizes the SOT346 outline, providing a standardized solution for pre-biased switching needs within the broader discrete semiconductor portfolio.
Direct functional substitutes within the same series include PDTA114ET (SOT23) and PDTA114EU (SOT323), provided the package footprint can be adapted. Complementary NPN versions like PDTC114EK are available for differential signaling requirements.