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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：180 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTA114EMB is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP transistor with built-in bias resistors R1 and R2 into a leadless ultra-small DFN1006B-3 (SOT883B) plastic package. The device features a collector-emitter voltage (VCEO) of -50 V, an output current capability of -100 mA, and a total power dissipation of 250 mW at 25 °C. Internal resistor values are specified as R1 = 10 kΩ and R2 = 10 kΩ. The component is AEC-Q101 qualified for automotive applications and operates within an ambient temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates a PNP transistor with dual bias resistors in a single surface-mount package
- Features a leadless ultra-small DFN1006B-3 package with a low profile height of 0.37 mm
- Qualified according to the AEC-Q101 standard for automotive reliability
Applications
- Low-current peripheral driver circuits
- Control of IC inputs
- Mobile applications
- Replacing general-purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix '315' against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure that the DFN1006B-3 footprint requirements align with the target Printed-Circuit Board design before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a compact solution combining switching functionality with integrated biasing. The DFN1006B-3 package offers a reduced physical footprint compared to traditional SMD packages. Verify that the required collector current does not exceed the 100 mA limit under the intended operating thermal conditions.
Part Context
This part belongs to the PDTA114 series of PNP resistor-equipped transistors from Nexperia. It serves as the complement to the NPN variant PDTC114EMB. Both devices utilize the same DFN1006B-3 package dimensions and pinout configuration, facilitating symmetrical design options for complementary logic or push-pull driver stages.
Replacement Considerations
Direct replacements include other PNP RETs with identical -50 V ratings, -100 mA current limits, and matching 10 kΩ/10 kΩ internal resistor configurations housed in the DFN1006B-3 package.
